Surface oxide on thin films of yttrium hydride studied by neutron reflectometry

The mechanical wafer consists of three layers, a 300 µm thick silicon substrate (yellow), a thin oxide layer (green) and a 35 µm thick silicon device layer (purple). The

It was found that Be forms a uniform oxide layer at the oxide–metal interface which slows the diffusion of Mg and Al from the metal into the oxide layer resulting in a reduced

Figure 4a−c shows chemisorption of oxygen by forming oxide ions bridging two surface cations (reaction 4) for coverages up to

The suggested method comprises of the PBE functional with Grimme’s dispersion correction, the TZ2P basis set with a frozen core of up to 2p for chromium and 1s for oxygen and

The observed evolution of the grain structure with annealing temperature is discussed in terms of native oxide, surface roughness, diffusivity and grain

Section 3 presents the results, including (i) details related to the interaction of CH 4 with the iron oxide surface unveiled via DFT, (ii) gas-surface kinetics of decomposition of CH

Two neutron reflectometry measurement series were performed, with different objectives: The internal structure of the asphaltene layer was determined by varying

The lifetime of the samples with a-Si:H surface passivating films of variable thickness, both with and without the a- SiN x :H capping layer, was measured in the as grown state