MEMS Sensor/IC Integration for Miniaturized TPMS (e-CUBES)

2.1 Strain sensor system with interferometric interrogation 7 2.2 Strain sensor system with scanning Fabry-Perot filter interrogation 8 2.3 Fibre optic accelerometers

A “via first” post backend-of-line 3D integration technology (see Fig. 2) based on TSVs and stacking of devices by intermetallic compound bonding (ICV-SLID) has been developed

Fraunhofer IZM developed a pure “via first” 3-D integration process, the so-called ICV-SLID technology based on inter-chip vias (ICV) through the device substrates (through

 Thinned ASIC IC flip-chipped to MEMS wafer with solder bumps.  Known

Surface micromachined MEMS wafers normally only need a cap wafer on the top side of the sensor whereas this bulk micromachined pressure sensor also needed an inlet wafer at

Taklo, Nicolas Lietaer, Hannah Tofteberg: SINTEF, Norway Timo Seppänen: Infineon Technologies SensoNor, Horten, Norway*.. Peter Ramm: Fraunhofer-IZM, Munich, Germany Werner

The two key process technologies required for 3D integration are the fabrication of through silicon/substrate vias (TSVs) and chip-to-wafer or wafer-to-wafer bonding.. The

14 µm holes through 320 µm thick wafer bonded to support wafer in 40 min etch time. Etch stop against oxide with